To our customers,
Old Company Name in Catalogs and Other Documents
On April 1 st , 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1 st , 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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NP83P06PDG-E1-AY MOSFET P-CH -60V 83A TO-263
NP84N075MUE-S18-AY MOSFET N-CH 75V 84A TO-220
NP88N03KDG-E1-AY MOSFET N-CH 30V 88A TO-263
NP88N03KUG-E1-AY MOSFET N-CH 30V 88A TO-263
NP88N04KUG-E1-AZ MOSFET N-CH 40V 88A TO-263
NP88N04NUG-S18-AY MOSFET N-CH 40V 88A TO-262
NP88N055KUG-E1-AY MOSFET N-CH 55V 88A TO-263
NP88N075MUE-S18-AY MOSFET N-CH 75V 88A TO-220
相关代理商/技术参数
NP83P04PDG-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:
NP83P04PDG-E2-AY 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
NP83P06PDG 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
NP83P06PDG-E1-AY 功能描述:MOSFET P-CH -60V 83A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP83P06PDG-E2-AY 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
NP83W 制造商:Hubbell Premise Wiring 功能描述: 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 3-G, 3) DUP, WH
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